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IET Electronics Letters features "Rainbow Bridges" (InGaP/InAlGaP orange laser)
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IET Electronics Letters features "Rainbow Bridges" (InGaP/InAlGaP orange laser)

The first demonstration of an InGaP/InAlGaP- based orange laser emitting at 608 nm has been reported by the Photonics Laboratory. Using a cost effective approach, the work is aimed at filling a wavelength gap in the visible spectrum for commercial semiconductor lasers, enabling a wide range of uses including lighting and VLC.

http://digital-library.theiet.org/content/journals/10.1049/el.2015.2124

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KAUST-Nobel Laureate Collaboration Bringing Light to the World
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KAUST-Nobel Laureate Collaboration Bringing Light to the World

Boon Ooi, KAUST Professor of Electrical Engineering, Nobel laureate Shuji Nakamura from the University of California, Santa Barbara (UCSB) and a team of researchers from King Abdulaziz City of Science and Technology (KACST) are working to provide energy-efficient lighting to the world.

http://www.kaust.edu.sa/latest-stories/kaust-nobel-laureate-collaboration-bringing-light-to-the-world.html

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KAUST-IEMN Workshop on Nanotechnology & Photonics
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KAUST-IEMN Workshop on Nanotechnology & Photonics

​The objective of the joint KAUST-IEMN/UVHC workshop is to provide a forum for interaction between the leading scientists who are at the cutting edge of nanotechnology and photonics, and the faculty at KAUST and other institutions in the Kingdom of Saudi Arabia.

The workshop is supported in part by KAUST and IEMN/UVHC

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Semiconductor Today’s editorial features "Red lasers from III-nitride nanowire forests on silicon"
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Semiconductor Today’s editorial features "Red lasers from III-nitride nanowire forests on silicon"

Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires grown on silicon. With a view to plastic fiber optical communication, potential applications include mobile projectors, head-up displays in automobiles, and photodynamic therapy. Production on silicon promises lower-cost production and mass manufacturing.​​​​​

http://www.semiconductor-today.com/news_items/2015/apr/kaust_290415.shtml

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Special Speaker Prof. Elhadj Dogheche from Institute of Electronic Microelectronic & Nanotechnology IEMN CNRS, University of Valenciennes France.
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Special Speaker Prof. Elhadj Dogheche from Institute of Electronic Microelectronic & Nanotechnology IEMN CNRS, University of Valenciennes France.

It was our honor to have the special speaker Prof. Elhadj Dogheche from Institute of Electronic Microelectronic and Nanotechnology IEMN CNRS, University of Valenciennes France to give us a presentation on New Generation on Gallium Nitride based High Speed Photonic Devices in the 216th Journal Club Meeting.​​

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