Hongliang Chang

Written By Omar Al-Khazragy

Postdoctoral Research Fellow

hongliang.chang@kaust.edu.sa|Download CV

Introduction

​Hongliang Chang joined the Photonics laboratory of King Abdullah University of Science and Technology (KAUST) in September 2022. He obtained Ph. D. of Engineering in the Institute of Semiconductor, Chinese Academy of Sciences, China in 2021. During his Ph. D., he realized the high-quality epitaxial of the large-match semiconductor system based on 2D materials, and fabricated high-performance DUV optoelectronic devices. His current research focus on the development of wide-band semiconductor film based optoelectronic devices and system for its applications in optical-based wireless communication. He also served as the youth reviewer for Chinese Journal of Luminescence.

Research Interests

  • ​Nanomaterials

  • Large bandgap group-III nitride

  • Photonics and optoelectronics​

Selected Publications

​1) H. Chang, Z. Chen, W. Li, J. Yan, R. Hou, S Yang, Z. Liu, G. Yuan, J. Wang, J. Li, P. Gao, and T. Wei, “Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate,” Applied Physics Letter 114, 091107 (2019). (Sci light & Feature Article, Highly Cited Articles)

2) H. Ci*, H. Chang*, R. Wang, T. Wei, Y. Wang, Z. Chen, Y. Sun, Z. Dou, Z. Liu, Ji. Li, P. Gao, and Z. Liu, “Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer,” Advanced Materials 31, 1901624 (2019). (*Equal contributing authors)

3) H. Chang, Z. Chen, B. Liu, S. Yang, D. Liang, Z. Dou, Y. Zhang, J. Yan, Z. Liu, Z. Zhang, J. Wang, J. Li, Z. Liu, P. Gao, and T. Wei, “Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes,” Advanced Science 7, 2001272 (2020).

4) H. Chang, B. Liu, D. Liang, Y. Gao, J. Yan, Z. Liu, Z. Liu, J. Wang, J. Li, P. Gao, and T. Wei, “Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes,” Applied Physics Letter 117, 181103 (2020).

5) Z. Chen*, H. Chang*, T. Cheng, T. Wei, R. Wang, S. Yang, Z. Dou, B. Liu, S. Zhang, Y. Xie, Z. Liu, Y. Zhang, J. Li, F. Ding, P. Gao, and Z. Liu, “Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes”, Advanced Functional Materials 30, 2001483 (2020). (*Equal contributing authors)

6) H. Chang, J. Shan, D. Liang, Y. Gao, L. Wang, J. Wang, J. Sun, and T. Wei, “Transfer-free graphene-guided high-quality epitaxy of AlN film for deep ultraviolet light-emitting diodes”, Journal of Applied physics 130, 193103 (2021). (Invited article)

7) H. Chang, Z. Liu, S.Yang, Y. Gao, J. Shan, B. Liu, J. Sun, Z. Chen, J.Yan, Z. Liu, J. Wang, J. Li, P. Gao, Z. Liu, and T. Wei, “Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode”, Light: Science & Applications 11:88 (2022)

8) Z. Chen, X. Zhang, Z. Dou, T. Wei, Z. Liu, Y. Qi, H. Ci, Y. Wang, Y. Li, H. Chang, J. Yan, S. Yang, Y. Zhang, J. Wang, P. Gao, J. Li, and Z. Liu, High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer. Advanced Materials 30, 1801608 (2018).

9) Z. Chen, Z. Liu, T. Wei, S. Yang, Z. Dou, Y. Wang, H. Ci, Hongliang Chang, Y. Qi, J. Yan, J. Wang, Y. Zhang, P. Gao, J. Li, and Z. Liu, “Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene”, Advanced Materials 31, 1807345 (2019).

10) Y. Wang, S. Yang, H. Chang, W. Li, X. Chen, R. Hou, J. Yan, X. Yi, J.Wang, T. Wei, “Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering”, Applied Surface Science 520, 146358 (2020).

11) J. Su, D. Liang, Y. Zhao, J. Yang, H. Chang, R. Duan, J. Wang, L. Sun, T. Wei, “Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy”, Applied Surface Science 526, 146747 (2020).

12) X. Zhang, Z. Chen, H. Chang, J. Yan, S. Yang, J. Wang, P. Gao, T. Wei, Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. Journal of Visualized Experiments e60167 (2020).​

Conference Proceedings

1) (Oral presentation) H. Chang, J. Yan, Z. Liu, J. Wang, J. Li, and T. Wei, “Study on AlN Epitaxy Mechanism and Deep Ultraviolet Devices on 2D Graphene”, the 15th National MOCVD Academic Conference (China), Jiangxi, China, Aug. 2018.

2) (Oral presentation) H. Chang, J. Yan, Z. Liu, J. Wang, J. Li, and T. Wei, “Epitaxial growth of AlN Film for Deep Ultraviolet LED Enabled with graphene as an interlayer”, International Workshop on UV Materials and Devices 2018, Kunming, China, Dec. 2018.

3) (Oral presentation) H. Chang, J. Yan, Z. Liu, J. Wang, J. Li, and T. Wei, the 4th National Conference on Wide Bandgap Semiconductors, “Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode”, Xiamen, China, Oct. 2021.

Education

  • ​2016-2021: Ph. D. in Microelectronics and Solid-State Electronics, Institute of Semiconductors, Chinese Academy of Science (IOS, UCAS), China

  • 2012-2016: B.Eng. in Materials Science and Engineering, Beijing University of Chemical Technology (BUCT), China

Awards

  • ​2020: National Scholarship by China’s Ministry of Education

  • 2021: Scholarship for the Director of the Institute of Semiconductors

  • 2021: Scholarship for the President of the Chinese Academy of Sciences

KAUST Affiliations

​Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), Electrical and Computer Engineering​

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